Abstract
Electrohydrodynamic (EHD) jet-printed indium-zinc-oxide thin-film transistors (TFTs) were prepared at various annealing temperatures. The EHD jet was achieved by optimizing the process parameters; such as the precursor viscosity, driving voltages, and substrate temperatures. The EHD jet-printed IZO films were characterized using a range of analytical methods. Metal oxide formation was confirmed by X-ray photoelectron spectroscopy. The EHD jet-printed IZO TFTs showed good electrical properties: a mobility of 4.8 cm $^{2}/{\hbox{V}}\cdot{\hbox{s}}$ , a threshold voltage of 8.4 V, an on-to-off current ratio of ${\hbox{10}}^{7}$ , and a subthreshold slope of 1.2 V/dec at 400 $^{\circ}$ C. The positive and negative bias stability were also analyzed.
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