Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride.

Nayan C Das,Jae-Hyung Jang,Minjae Kim,Jarnardhanan R Rani,Sung-Min Hong

doi:10.3390/mi12091049

Abstract

Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming-free MgFx based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 102 and good data retention of >104 s. The resistive switching mechanism in the Ti/MgFx/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgFx layer. In addition, filamentary switching mode at the interface between the MgFx and Ti layers is assisted by O–H group-related defects on the surface of the active layer.

Highlights

Among emerging non-volatile memory (NVM) technologies, resistive switching random access memory (RRAM) is a promising technology due to its properties of low-power consumption, high switching speed, excellent scalability, long-endurance, simple architecture, and complementary metal-oxide-semiconductor (CMOS) technology compatibility [1].RRAM can mimic biological synopsis, showing potential for neuromorphic applications [2].RRAMs are based on a metal-insulator-metal (MIM) structure, which generally involves an electroforming process to create conductive filaments between two metal electrodes through the insulating layer
The device switches from an initial high resistance state (HRS) to a low resistance state (LRS)
The structures of MgFx thin films can be controlled in phases from amorphous to crystalline by increasing the substrate temperature during deposition from room temperature to 300 ◦ C [14,15]

Summary

Introduction

Among emerging non-volatile memory (NVM) technologies, resistive switching random access memory (RRAM) is a promising technology due to its properties of low-power consumption, high switching speed, excellent scalability, long-endurance, simple architecture, and complementary metal-oxide-semiconductor (CMOS) technology compatibility [1]. RRAMs are based on a metal-insulator-metal (MIM) structure, which generally involves an electroforming process to create conductive filaments between two metal electrodes through the insulating layer. The device switches from an initial high resistance state (HRS) to a low resistance state (LRS). Other device operation parameters, including the applied voltage/current and the device operating environment, strongly affect the electroforming process [3]. Electroforming-free resistive switching is one of the most desired characteristics of RRAM

Methods

Results

Conclusion