Abstract

Growth of polycrystalline CdMnTe ternary compound thin films has been carried out using cathodic electrodeposition technique at different cathodic potentials. The range of the cathodic potentials used in this work has been chosen according to the cyclic voltammogram results. The CdMnTe thin films were electroplated from electrolyte containing CdSO4, TeO2 and MnSO4 in an acidic aqueous medium. Glass/fluorine-doped tin oxide (FTO) substrates have been used to electrodeposit the semiconductor layers. The structural, compositional, morphological, optical and electrical properties of the CdMnTe thin films were studied using X-ray diffraction (XRD), Sputtered neutral-mass spectroscopy (SNMS), Scanning electron microscopy (SEM), UV–Vis spectroscopy and Photo-electro-chemical (PEC) cell measurements respectively. The primarily grown as-deposited (AD) layers went through two different post-growth surface treatment conditions- heat-treated in air in the presence of CdCl2 (CCT) and heat-treated in air in the presence of GaCl3 (GCT). Results from the XRD indicated the polycrystalline nature of the electrodeposited films. The electroplated films have cubic crystal structures and the preferred orientation was found to be along the (111) plane of CdMnTe. Inclusion of Mn has been qualitatively observed using SNMS measurement. The optical energy bandgaps of the thin films were found to be varying between ~ 1.90 and ~ 2.20 eV. Though all the layers after post-treatment showed p-type electrical conduction, both p and n-type conductivity were obtained at different cathodic potentials for as-deposited materials. Comparison of the deposited layers to other electrodeposited ternary compounds has also been discussed.

Highlights

  • Cathodic deposition of Te at this voltage range is consistent with our previous works where same precursor for Te has been used at similar c­ oncentration[26]

  • Structural analysis of the as-deposited (AD) and ­CdCl2-treated (CCT) CdMnTe layers at different growth voltages were carried out using Philips PW X’Pert Pro diffractometer with a Cu-Kα monochromator having a wavelength of 1.54 Å, where the source tension and current have been kept as 40 kV and 40 mA respectively

  • The sample that has been used for this study is the CCT-CdMnTe layer grown at 1430 mV. This voltage (1430 mV) cathodic potential

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Summary

Introduction

Cathodic deposition of Te at this voltage range is consistent with our previous works where same precursor for Te has been used at similar c­ oncentration[26]. The deposition mechanism of the thin-film layers depending on the varied cathodic voltage and the resultant changes in the layer properties are further explained in “PEC cell measurement for electrical conductivity type” section.

Results
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