Abstract
We report on advances in the electrochemical deposition of indium (In) on molybdenum foil that enables deposition of electronic-grade purity, continuous films with thickness in the micron range. The desired In film morphology is obtained from an InCl3 aqueous bath by using a high current density of 250 mA/cm2 and a low deposition-bath temperature of −5°C to increase the nucleation density of In islands until a continuous film is obtained. As an example application, the electrodeposited In films are phosphorized via the thin-film vapor-liquid-solid growth method. The resulting poly-crystalline InP films display excellent optoelectronic quality, comparable to single crystalline InP wafers, thus demonstrating the versatility of the developed electrochemical deposition procedure.
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