Abstract
In this paper, we report the preparation of CuIn1−xGaxSe2 (CIGS) films using electrodeposition. The influence of individual salt concentration on film composition is discussed in detail. We observed that CuCl2 and H2SeO3 in the deposition bath strongly influence the film composition compared to GaCl3 and InCl3 salts. The deposited film morphology was also strongly influenced by the film composition. We also observed microcracks in the films when the films were deposited at low concentrations of CuCl2, InCl3, and GaCl3 salts and at high concentrations of H2SeO3.
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