Abstract

Amorphous silicon has been successfully electrodeposited on copper using a SiCl4 based organic electrolyte under galvanostatic conditions. The electrodeposited silicon films were characterized for their composition, morphology and structural characteristics using glancing angle X-ray diffraction (GAXRD), scanning electron microscopy (SEM), and Raman spectroscopy. GAXRD and Raman analyses clearly confirm the amorphous state of the deposited silicon film. The deposited films were tested for possible application as anodes for Li-ion battery. The results indicate that this binder free amorphous silicon anode exhibits a reversible capacity of ∼1300 mAh g−1 with a columbic efficiency of >99.5% up to 100 cycles. Impedance measurements at the end of each charge cycle show a non-variable charge transfer resistance which contributes to the excellent cyclability over 100 cycles observed for the films. This approach of developing thin amorphous silicon films directly on copper eliminates the use of binders and conducting additives, rendering the process simple, facile and easily amenable for large scale manufacturing.

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