Abstract
Tin selenide thin films of about 300nm thickness were electrodeposited on SnO2:F coated transparent conductive oxide glass substrates. The optimum deposition potential was determined from cyclic voltammetry measurements. The films were polycrystalline with orthorhombic structure and the grain size was about 18nm. SEM images showed a highly porous film structure. The band gap estimated from optical spectra of these films showed absorption due to direct transition occurring at 1.1eV. Characteristic vibrational modes of the SnSe were observed in the Raman spectrum. The films are p-type, photosensitive, and the conductivity measured in dark was in the range of 10−5Ω−1cm−1. A prototype CdS/SnSe photovoltaic device showed an open circuit voltage of 140mV and short circuit current density 0.7mA/cm2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
