Abstract
A mixed conductive Pr0.7Sr0.3Fe0.8Al0.2O3-δ (PSFA) thin film has been prepared by using pulsed laser deposition (PLD) and its electrochemical properties have been investigated. A dense PSFA target for PLD was prepared at 1130 oC for 10 h. By using the target, 285 nm-thick PSFA thin film was deposited on an 8mol%Y2O3-doped ZrO2 substrate at 625 oC. The PSFA thin film was well crystallized and its grain size was in the range of 5 to 10 nm. The PSFA thin film showed an area specific resistance (ASR) of 0.37 Ω•cm2 at 900 oC. The activation energy of ASR was approximately 1.6 eV at temperature range of 600 to 900 oC.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have