Abstract
Although the CoSb3-based skutterudite thermoelectric devices have been highly expected for wide uses such as waste heat recovery and space power supply, the limited long-term service stability majorly determined by the degradation of electrode interface obstructs its applications. Here, we built up an effective criterion for screening barrier layer based on the combination of negative interfacial reaction energy and high activation energy barrier of Sb migration through the formed interfacial reaction layer. Accordingly, we predicted niobium as a promising barrier layer. The experimental results show the skutterudite/Nb joint has the slowest interfacial reaction layer growth rate and smallest interfacial electrical resistivity. The fabricated 8-pair skutterudite module using Nb as barrier layer achieves a recorded conversion efficiency of 10.2% at hot-side temperature of 872 K and shows excellent stability during long-time aging. This simple criterion provides an effective guidance on screening barrier layer with bonding-blocking-conducting synergetic functions for thermoelectric device integration.
Highlights
The CoSb3-based skutterudite thermoelectric devices have been highly expected for wide uses such as waste heat recovery and space power supply, the limited long-term service stability majorly determined by the degradation of electrode interface obstructs its applications
Combining the first-principles calculations and experimental results, we propose a criterion, the combination of interfacial reaction energy (EIR) and activation energy barrier of Sb migration (EMig) in the formed interfacial reaction layers (IRLs), to determine the interfacial reliability of SKD/metal bonding
Combining first-principles calculations and experimental investigation, it is revealed that, the formation and evolution of the IRL that determine the bonding behavior and interfacial resistivity are majorly contributed by the two processes: interfacial reaction between barrier layer and filled SKD, and Sb diffusion from filled SKD TE material across IRL
Summary
The CoSb3-based skutterudite thermoelectric devices have been highly expected for wide uses such as waste heat recovery and space power supply, the limited long-term service stability majorly determined by the degradation of electrode interface obstructs its applications. Combining the first-principles calculations and experimental results, we propose a criterion, the combination of interfacial reaction energy (EIR) and activation energy barrier of Sb migration (EMig) in the formed IRL, to determine the interfacial reliability of SKD/metal bonding.
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