Abstract
The metallization and the characterization atmosphere influences on the dielectric properties of a polyimide (PI) material at high temperature have been studied using metal-insulator-metal (MIM) structures. Although the Au and Ag metallized structures exhibit a similar behaviour, relatively stable during thermal ageing, the Al metallized ones present an additional interfacial relaxation of high magnitude and instable in air. This instability leads to the dielectric property improvement. SEM images, supported by the Al-PI-Al structure physico-chemical analysis after the thermal ageing in air, showed the growth of thick interfacial layers at the PI film edges, mainly due to the Al atom diffusion towards the PI bulk. A probable recombination of Al atoms with O atoms coming from air could explain such a behaviour through the formation of Al x O y barrier interfacial layers.
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