Abstract
Zinc telluride films were prepared electrochemically on gold electrodes via a two-step method. The tellurium(0) was first deposited on the gold electrode by potentiostatically reducing tellurium(IV) dissolved in an acidic solution. The zinc telluride film was then prepared by potentiostatic or potentiodynamic reduction of the tellurium film thus deposited in the presence of zinc sulfate. The film deposition was supported by the frequency decreases recorded during the deposition of tellurium and zinc telluride using an electrochemical quartz crystal microbalance, as well as the spectral changes, accompanying the deposition of these films. The zinc telluride film thus prepared showed a p-type behavior as evidenced by cathodic photocurrents produced upon illumination. The bandgap energy of zinc telluride thus prepared was determined to be about 2.27 eV from its absorption spectrum. © 2003 The Electrochemical Society. All rights reserved.
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