Abstract
A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and potentiostatic anodization modes. Anodization in NaCl electrolytes was found to result in the formation of porous structures with porosity controlled either by current under the galvanostatic anodization, or by the potential under the potentiostatic anodization. Possibilities to produce multilayer porous structures are demonstrated. At the same time, one-step anodization in a HNO3 electrolyte is shown to lead to the formation of GaAs triangular shape nanowires with high aspect ratio (400 nm in diameter and 100 µm in length). The new data are compared to those previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated.
Highlights
Electrochemical technology became an established and costeffective approach for the preparation of porous semiconductor matrices and arrays of nanowires with tailored architecture at the submicrometer scale [1,2,3]
The porous features produced by GaAs anodization in NaCl electrolyte are similar to those previously observed in GaAs samples with the same carrier concentration anodized in HCl electrolyte [1]
The morphology of the porous structure produced by galvanostatic anodization of GaAs(111)A surface (Figure 1A) consists of two sets of ⟨111⟩ crystallographically oriented pores intersecting each other [2]
Summary
Electrochemical technology became an established and costeffective approach for the preparation of porous semiconductor matrices and arrays of nanowires with tailored architecture at the submicrometer scale [1,2,3]. A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and potentiostatic anodization modes.
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