Abstract
In this study, Yttrium (Y) doped and undoped Zinc oxide (ZnO) nanorods (NRs) were synthesized by the electrochemical method on indium tin oxide (ITO) substrate. Y doped and undoped ZnO-NRs were used as an electron selective layer in inverted type organic solar cell structure. Effect of Y doping in ZnO was investigated via x-ray diffraction (XRD) and scanning electron microscopy (SEM). Poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester (P3HT:PCBM) was used as an active polymer blend. Inverted type organic solar cells were fabricated with the configuration ‘ITO/Y:ZnO-NRs/P3HT:PCBM/Ag’. Active layer was coated on ZnO-NRs by using drop-casting method to completely fill the gaps between the ZnO-NRs. Short circuit current density of the solar cells was increased from 10.6 to 16.4 mA cm−2 by using 3% Y doped ZnO-NRs as electron selective layer, where as the solar cell efficiency was changed from 2.35% to 3.87%. It was experimentally found that charge injection and selection in the Zn-ONRs were improved by doping the ZnO-NRs with Y atoms.
Published Version
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