Abstract
Bismuth layers have been deposited electrochemically on (100) n- and p-type GaAs. The electrical properties of junctions on n-GaAs were dependent on the bismuth deposition potential. Bismuth films deposited at −0.2 V (Ag/AgCl) were compact, continuous, and exhibited good adhesion; the n-GaAs/Bi junctions exhibited an average barrier height of 0.83 eV. Films deposited at ⩽−0.3 V were porous and the barrier heights exhibited an aging effect decreasing to 0.73 eV after several days under ambient conditions. Bismuth films deposited on p-GaAs exhibited barrier heights of 0.57 eV. The sum of the barrier heights for n- and p-type junctions correspond to 1.40 eV, close to the band gap of GaAs consistent with Fermi-level pinning.
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