Abstract
The anodic dissolution and passivation of n‐ and p‐type Si in different concentrations of hydrazine solution and etching temperatures were studied. During etching, performed at 70 and 90°C, it was observed that the current‐potential characteristics for both n‐ and p‐type Si snowed a current reduction after reaching a peak value. A linear I‐V relation was observed for the room temperature etching. A mechanism, which accounts for the semiconductor energy level change in solution as under different biasing conditions, is proposed to give a qualitative explanation of the different I‐V behaviors for n‐ and p‐type semiconductors.
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