Abstract
The anodic dissolution and passivation of n‐ and p‐type Si in different concentrations of hydrazine solution and etching temperatures were studied. During etching, performed at 70 and 90°C, it was observed that the current‐potential characteristics for both n‐ and p‐type Si snowed a current reduction after reaching a peak value. A linear I‐V relation was observed for the room temperature etching. A mechanism, which accounts for the semiconductor energy level change in solution as under different biasing conditions, is proposed to give a qualitative explanation of the different I‐V behaviors for n‐ and p‐type semiconductors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
