Electrochemical Etching of silicon with sub-500 nm feature size

Abstract

In this work we present the first steps towards achieving Photonic Crystals (PCs) operating in the Near-Infrared (NIR) wavelength range using Macroporous Silicon (MPS). The MPS structures herein shown are fabricated using Electrochemical Etching (EE) of silicon. Pores are arranged in a square lattice of 500 nm periodicity and pore size is around 200 nm to 350 nm. Preliminary results show straight pores with good uniformity and controlled dimensions.