Abstract
Cu-rich CuInS2 thin films for solar cell application were electrochemically etched to avoid a toxic cyanide treatment. Cu/In ratio and conductivity of the films decreased by anodic electrochemical etching. Although XRD patterns and SEM micrographs have not changed by the etching, Raman spectra revealed that the electrochemical etching was found to be effective for removing Cu-S secondary phases from the surface of the Cu-rich CuInS2 thin films. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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