Electrochemical Dissolution of Ta and TaN Diffusion Barrier Materials

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With the introduction of Cu for interconnect metallization, materials have been placed between Cu and the active device/adjacent dielectric to serve both as Cu diffusion barriers and as adhesion promoters. Various refractory transition metals and their binary and ternary compounds, characterized by both high melting points and chemical inertness with respect to Si compound formation, have been investigated as candidate diffusion barrier materials in Cu metallization schemes. 1