Electrochemical diffusion of arsenic in silicon through thermal thin SiO2 films

Abstract

In this letter we report experimental results of electrochemical doping of 〈111〉 p-type silicon with arsenic through thin SiO2 films. C-V plots of metal-oxide-semiconductor n-p junctions, made in the electrochemical process, were taken. Data of the amount of arsenic impurity concentration diffused into silicon are given for different electrochemical diffusion times. An estimate value for the diffusion coefficient of arsenic in SiO2 films at room temperature is also presented.