Abstract

Te and Se layers were deposited on〈glass/FTO/flat-TiO2〉by electrochemical deposition. The Te-Se-stacked layer was annealed at 200°C, and then, the migration of Te into the Se layer by annealing was confirmed using auger electron spectroscopy (AES), which was performed by Te doping on the Se layer. Au back contact was coated by vacuum deposition on the Te-doped Se layer, resulting in superstrate-structured solar cells of〈glass/FTO/flat-TiO2/Se-doped Te/Au〉with a 0.50 V open-circuit voltage, 6.4 mA/cm2photocurrent density, 0.36 fill factor, and 1.17% conversion efficiency.

Highlights

  • Due to the nuclear disaster in Japan (Fukushima) caused by a tsunami, a lot of nuclear plants have been closed, which has caused big problems concerning electric power

  • A TiO2/Se solar cell is promising as a cost-effective In-Ag-free solar cell, which was fabricated using the vacuum deposition method with Te doping on the Se layer [6]

  • Selenium and tellurium were electrochemically deposited onto flat TiO2 layers, resulting in the simple superstrate structure and simple process solar cells

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Summary

Introduction

Due to the nuclear disaster in Japan (Fukushima) caused by a tsunami (on 11 March 2011), a lot of nuclear plants have been closed, which has caused big problems concerning electric power. A TiO2/Se solar cell is promising as a cost-effective In-Ag-free solar cell, which was fabricated using the vacuum deposition method with Te doping on the Se layer [6]. Selenium and tellurium were electrochemically deposited onto flat TiO2 layers, resulting in the simple superstrate structure and simple process solar cells.

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