Abstract
We investigate the electrical manipulation of the phase transition in ultrathin FeRh films through a combination of ionic liquid and oxide gating. The 5 nm-thick FeRh films show an antiferromagnetic-ferromagnetic transition at around 275 K with in-plane magnetic field of 70 kOe. A negative gate voltage seriously suppresses the transition temperature to ∼248 K, while a positive gate voltage does the opposite but with a smaller tuning amplitude. The formation of electric double layer associated with a large electric field induces the migration of oxygen ions between the oxide gate and the FeRh layer, producing the variation of Fe moments in antiferromagnetic FeRh accompanied by the modulation of the transition temperature. Such a modulation only occurs within several nanometers thick scale in the vicinity of FeRh surface. The reversible control of FeRh phase transition by electric field might pave the way for non-volatile memories with low power consumption.
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