Electrochemical Atomic Layer Deposition (E-ALD) of Pt Nanofilms Using SLRR Cycles

Abstract

This paper describes platinum nanofilm formation via the electrochemical form of atomic layer deposition (E-ALD), where the E-ALD cycles are based on surface limited redox replacement (SLRR) reaction. SLRR is where an atomic layer (AL) of a reactive (sacrificial) metal is exchanged for a more noble metal. In the present study both Cu and Pb AL were investigated as sacrificial atomic layers for replacement with both Pt(II) and Pt(IV) precursors. 25 E-ALD cycles were used to form Pt nanofilm deposits. Initial deposits contained an order of magnitude more Pt than expected, evidenced by a factor of 7 increase in surface roughness. Overly positive potentials achieved during the exchange promoted excess deposition and surface roughening. It is proposed that anionic Pt precursors adsorbed more strongly at high potentials, making them difficult to rinse from the cell. Those remaining adsorbed Pt anions are then reduced to Pto when the potential was shifted negative for deposition of the sacrificial element. The result was Pto formation at a large overpotential, which, contributed to excessive Pt deposits and roughening. Increased rinsing of the anionic Pt precursors from the cell eliminated the excess Pt deposition and roughening, resulting in the expected layer by layer growth of an ALD process.