Electrochemical Approach for Selenization of Stacked Cu–In Layers for Formation of Crystalline CuInSe2

Abstract

We report an electrochemical approach to form crystalline (CIS) films onto indium-tin-oxide substrates via thermal treatment to Se-coated Cu–In alloy. The simultaneous deposition of Cu–In alloy with optimum thickness was obtained by an electrochemical method from a mixture of aqueous solutions of and at constant potential. Further, the electrochemical method was used for deposition of elemental Se onto the priorly deposited Cu–In alloy film. To produce CIS films, Se-coated Cu–In alloy films were annealed in argon atmosphere at different temperatures ca. for . The Cu–In alloy, Se-coated Cu–In alloy, and thermally treated films were characterized using X-ray diffraction to identify the phases and scanning electron microscopy to observe the surface morphology.