Abstract
N 2 + implantation was performed into sputter-cleaned Al and anodically oxidized Al samples (3 nm < d oxide <50 nm). The energies of the N 2 + ions ranged between 3 and 200 keV using doses between 2 × 10 15 and 1.8 × 10 18 N 2 + cm −2. Changes in surface conductivity and anodic behaviour were observed after 3 keV implantation of 2 × 10 17 N 2 + cm −2 as studied by electrochemical methods and X-ray photoelectron spectroscopy (XPS). Radiation effects, such as AlN formation and gaseous nitrogen inclusions within the oxide, were monitored in situ after low energy implantation. AlN formation by reactive implantation from the oxide was only observed after a reactive Al 2O 3− x surface was produced by the N 2 + ion beam.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
