Abstract
Problems, associated with electrochemical dimensional treatment and chemical deposition as methods of manufacturing nanocomposites based on the AIIIBV semiconductors, are considered by studying indium phosphide (n-InP). The results of manufacturing nanocomposites Cu-n-InP and Ag-n-InP by chemical deposition of copper and silver into pores produced by electrochemical anodic dissolution are described. The metallization kinetics and peculiarities of metal distribution inside nanopores at large values of A are described (A = h/d is a geometrical factor or an aspect ratio, where h and d are the pore’s depth and diameter). It is shown that the degree of the nanopores’ filling is defined by the chemical deposition rate. A relatively high copper deposition rate pertaining to the manufacturing of Cu-n-InP leads to a low throwing power of electrolyte and, as a consequence, to a low level of the pores’ filling. Conversely, the substantially lower rate of the silver chemical deposition from a triethanolamine-containing solution leads to a better uniformness of deposition and to the reaching of conditions conducive to a higher degree of the pores’ filling with metal.
Published Version
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