Abstract
This article presents an electro-thermo-mechanical simulation of a SiC MOSFET transistor. The simulation was performed using Synopsis TCAD for electric modelling and ANSYS for thermo-mechanical modelling. A method upgrading stress estimation of a SiC MOSFET chip is suggested. It includes a bridge between Sentaurus TCAD and ANSYS mechanical, an aluminium's fusion model and a multiscale simulation. Finally, a difference between an isolated cell and a cell within a chip has been noticed. The results of the simulation provide valuable insights into the behaviour of SiC MOSFET transistors during short-circuit events.
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