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Abstract
A single device with extensive new functionality is highly attractive for the increasing demands for complex and multifunctional optoelectronics. Multi-field coupling has been drawing considerable attention because it leads to materials that can be simultaneously operated under several external stimuli (e.g. magnetic field, electric field, electric current, light, strain, etc.), which allows each unit to store multiple bits of information and thus enhance the memory density. In this work, we report an electro–opto–mechano-driven reversible multi-state memory device based on photocurrent in Bi0.9Eu0.1FeO3 (BEFO)/La0.67Sr0.33MnO3 (LSMO)/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) heterostructures. It is found that the short-circuit current density (Jsc) can be switched by the variation of the potential barrier height and depletion region width at the Pt/BEFO interface modulated by light illumination, external strain, and ferroelectric polarization reversal. This work opens up pathways toward the emergence of novel device design features with dynamic control for developing high-performance electric–optical–mechanism integrated devices based on the BiFeO3-based heterostructures.
Highlights
IntroductionFacing the challenge of the limitation of Moore's law,[1,2] a single device that integrates extensive new functionality is highly desired for the ever-increasing demands for devices with faster, higher density, high energy efficiency data processing/storage with reversible and nonvolatile manipulation.[3,4,5] Very recently, multiferroic materials and heterostructures have been reported as two of the most promising candidates for realizing such an integration of different functions.[6,7,8,9,10,11,12] most of the studies mainly focus on the functional controllability using an external electric or magnetic eld, rarely paying attention to exploration of other external control parameters
Light control has become a novel manner with nondestructive program/erase process compared with electrical tuning, and aSchool of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China bInstitute for Advanced Materials, Hubei Normal University, Huangshi 435002, China cElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xian Jiaotong University, Xian 710049, China dLaboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China † Electronic supplementary information (ESI) available
We report an electro–opto–mechano-driven reversible and multi-state memory device, based on photocurrent effect in Bi0.9Eu0.1FeO3 (BEFO)/La0.67Sr0.33MnO3 (LSMO)/PMN-PT heterostructures
Summary
Facing the challenge of the limitation of Moore's law,[1,2] a single device that integrates extensive new functionality is highly desired for the ever-increasing demands for devices with faster, higher density, high energy efficiency data processing/storage with reversible and nonvolatile manipulation.[3,4,5] Very recently, multiferroic materials and heterostructures have been reported as two of the most promising candidates for realizing such an integration of different functions.[6,7,8,9,10,11,12] most of the studies mainly focus on the functional controllability using an external electric or magnetic eld, rarely paying attention to exploration of other external control parameters. Light could solve sneak path currents that plague ultralow cost electronics,[4,14] which endows new functionality for memory devices and may open possibilities of remote control for advanced optoelectronic applications
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