Abstract
This work aims to study the electrical and optical properties of CuInS2 thin films to see the impact of rare earth doping on the properties of films obtained by Chemical bath deposition (CBD) in alkaline medium at 80 °C bath temperature. The observed and calculated lattice parameters are in good agreement with each other as confirmed from structural studies. Hall mobility and other parameters were calculated. The mobility of Pr doped film was quite high. E = hν = hc λ has been used to calculate the band gaps of various doped films of CuInS2. It is found that band gap is low for Sm doped film. This could be due to small particle size. Presence of dopant has been confirmed from EDS. PC studies has been done to know about the possible states in band gap. The photoconductive gain is high in Sm doped film. The emission spectrum were recorded for the wavelength 300–1000nm. The peak sharpness in terms of intensity is very high in Sm doped films. Spherical shape particles are prominently appeared on the surface of the film.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
