Abstract
The electro-optic characteristics of the semi-insulating andn + -type GaAs(001) surfacespassivated with n-alkanethiol self-assembled monolayers were investigated using Kelvin probe surface photovoltage(SPV) and photoluminescence (PL) techniques. Referencing the equilibrium surface barrierheight established in an earlier report, SPV measurements demonstrated a significant (>100 mV) increase in the non-equilibrium band-bending potential observed under low-levelphoto-injection. Modeling of the SPV accounts for these observations in terms of a large (>104) decreasein the hole/electron ratio of surface carrier capture cross-sections, which is suggested to result from theelectrostatic potential of the interfacial dipole layer formed upon thiol chemisorption. Thecross-section effects are verified in the high-injection regime based on carrier transportmodeling of the PL enhancement manifested as a reduction of the surface recombinationvelocity.
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