Abstract
Insulated gate bipolar transistor (IGBT) module is the critical device of modular multi-level converter (MMC) for flexible high voltage direct current (HVDC) transmission systems. The reliability of the IGBT is directly related to the safety of the converter station, and even affects the stability of the entire flexible HVDC transmission system. In this paper, we take the IGBT commonly used in MMC as the object of study. A coupled electric-thermal-mechanical field simulation model is proposed for 3.3 kV/ 50 A press-pack IGBTs. The model takes full account of multi-physics interactions and the non-linear properties of the material. The influence of pressure on component electrical contact resistance (R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">electrical</inf> ) and thermal contact resistance (R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">thermal</inf> ) is considered. The trend of the IGBT junction temperature and voltage drop with increasing conduction current is also investigated. The results show that the junction temperature of the IGBT chip is 55.615°C, and the voltage drop is 2.3342 V under 50 A conduction current. The junction temperature and voltage drop of IGBT increases nonlinearly with the increase of conduction current. This work can support the simulation and reliability evaluation of the press-pack IGBT for flexible HVDC converter valve.
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