Abstract
We report the electrically pumped wavelength-tunable ultraviolet random lasing from Mg(x)Zn(1-x)O films with different bandgap energies, which act as the semiconductor components in metal-insulator- semiconductor (MIS) structures fabricated on Si substrates. When the metal (Au herein) gates of the MIS structures are applied with sufficiently high positive voltages, random lasing from the Mg(x)Zn(1-x)O films occurs, featuring a series of narrow spikes in the emitted spectra. Overall, the central wavelength of the random lasing spectrum is tuned from approximately 377 to 352 nm with the increase of x value in Mg(x)Zn(1-x)O from 0 to 0.35. The mechanism for the electrically pumped random lasing has been tentatively elucidated taking into account both the multiple optical scattering and the optical gain proceeding in the Mg(x)Zn(1-x)O films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
