Abstract

We have demonstrated the compensation between optical gain and light scattering in electrically pumped random lasing (RL) from ZnO films through investigating the electroluminescence of MgxZn1−xO/ZnO (x=0.25 and 1) heterostructured devices. As the active ZnO films are sol-gel derived, both heterostructured devices can be electrically pumped into RL at appropriate forward currents. While the active ZnO films are prepared by sputtering, only the MgO/ZnO heterostructured devices can generate RL pumped with sufficient forward currents. It is believed that the light scattering in the sputtered ZnO films is weaker than that in the sol-gel derived ones. However, the inferior light scattering capability of the sputtered ZnO films can be compensated by the MgO/ZnO-heterostructure-enabled higher optical gain in the electrically pumped RL.

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