Abstract
Optical frequency conversion in chip-scale devices enables crucial applications in myriad fields, such as optical communication, spectroscopy, and sensing. With large nonlinearities and the possibility of monolithic pump laser integration coexisting within the same platform, compound semiconductor is a choice of material superior to many others. In this work, we demonstrate an intracavity difference frequency generation, electrically pumped diode lasers with external input signal beam. Thanks to exact phase matching and large bulk nonlinearity in the laser structures reported, there is a normalized internal conversion efficiency of 169% W−1 cm−2. We also demonstrate a broad tuning range between 1486 nm and 1686 nm, or 24 THz, which spans the S-C-L-U telecommunications bands.
Highlights
Optical nonlinear frequency conversion in semiconductors has enabled significant advances in ultrafast signal processing1 and microwave photonic functionalities.2 These play crucial roles in sensing, broadband spectroscopy, and high-performance communication applications.3 Currently, the primary platforms for harnessing optical nonlinearities for the aforementioned applications are based on silicon and Periodically Poled Lithium Niobate (PPLN)
To investigate the tunability of the self-pumped difference frequency generation (DFG) process, a range of signal wavelengths are injected into the device and the idler is monitored with the optical spectrum analyzer at a fixed injection current and stage temperature
Due to the limitation of the wavelength range provided by our signal source, we demonstrated a tunable bandwidth of approximately 100 nm (200 nm total if the idler is used as the input)
Summary
Optical nonlinear frequency conversion in semiconductors has enabled significant advances in ultrafast signal processing and microwave photonic functionalities. These play crucial roles in sensing, broadband spectroscopy, and high-performance communication applications. Currently, the primary platforms for harnessing optical nonlinearities for the aforementioned applications are based on silicon and Periodically Poled Lithium Niobate (PPLN). For the purpose of fully integrated photonic circuits, a hybrid integration platform is the main route that provides an integration pump source for PPLN or silicon by leveraging the well-developed laser technology in the compound semiconductor This approach severely limits the scalability of the system. For utilizing χ2 nonlinearities near the bandgap, a few approaches have been developed to achieve phase matching in such a highly dispersive medium, including form birefringence, quasi-phase matching, and modal phase matching. Among these approaches, form birefringence is the most developed for nonlinear conversion; it lacks the ability to perform electrically pumped intracavity frequency mixing. With the exact modal phase matching provided by the Bragg reflection waveguide design, difference frequency generation (DFG) is facilitated by coupling a signal into the device and an idler is generated within the same diode laser cavity
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