4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics

Abstract

Optical quantum information processing will require highly efficient photonic circuits to connect quantum nodes on-chip and across long distances. This entails the efficient integration of optically addressable qubits into photonic circuits, as well as quantum frequency conversion to the telecommunications band. 4H-silicon carbide (4H-SiC) offers unique potential for on-chip quantum photonics, as it hosts a variety of promising colour centres and has a strong second-order optical nonlinearity. Here, we demonstrate within a single, monolithic platform the strong enhancement of emission from a colour centre and efficient optical frequency conversion. We develop a fabrication process for thin films of 4H-SiC, which are compatible with industry-standard, CMOS nanofabrication. This work provides a viable route towards industry-compatible, scalable colour-centre-based quantum technologies, including the monolithic generation and frequency conversion of quantum light on-chip. Monolithic photonics devices based on SiC are fabricated by a wafer bonding and thinning technique. The strong enhancement of single-photon emission from a colour centre and optical frequency conversion with an efficiency of 360% W−1 are demonstrated.