Abstract
We report on the first electrically pumped continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers monolithically grown on on-axis Si (001) substrates without any intermediate buffer layers. A 400 nm antiphase boundary (APB) free epitaxial GaAs film with a small root-mean-square (RMS) surface roughness of 0.86 nm was first deposited on a 300 mm standard industry-compatible on-axis Si (001) substrate by metal-organic chemical vapor deposition (MOCVD). The QD laser structure was then grown on this APB-free GaAs/Si (001) virtual substrate by molecular beam epitaxy (MBE). Room-temperature cw lasing at ~1.3 µm has been achieved with a threshold current density of 425 A/cm2 and single facet output power of 43 mW. Under pulsed operation, lasing operation up to 102 °C has been realized, with a threshold current density of 250 A/cm2 and single facet output power exceeding 130 mW at room temperature.
Highlights
Driven by cloud-based applications, ‘big-data’ services and enterprise data centers, silicon photonics has become of increased interest due to its potential prospects for integration of optical data transfer with data processing electronics on a single silicon die utilizing CMOScompatible IC technology [1, 2]
We report on the first electrically pumped continuous-wave InAs/GaAs quantum dot (QD) lasers monolithically grown on on-axis Si (001) substrates without any intermediate buffer layers
A 400 nm antiphase boundary (APB) free epitaxial GaAs film with a small root-mean-square (RMS) surface roughness of 0.86 nm was first deposited on a 300 mm standard industry-compatible on-axis Si (001) substrate by metal-organic chemical vapor deposition (MOCVD)
Summary
Driven by cloud-based applications, ‘big-data’ services and enterprise data centers, silicon photonics has become of increased interest due to its potential prospects for integration of optical data transfer with data processing electronics on a single silicon die utilizing CMOScompatible IC technology [1, 2]. Direct epitaxial growth of III-V materials on Si substrates faces several significant challenges including large lattice mismatch, different thermal expansion coefficients and polar III-V versus non-polar Si surfaces, which induce the formation of different types of defects, such as threading dislocations (TDs), micro thermal cracks and antiphase boundaries (APBs), respectively. These defects all generate non-radiative recombination centers, which will dramatically reduce the quality of III-V materials as well as the operating performance and lifetime of devices fabricated from them [3, 9]. QD structures have attracted increasing attention for the active element of III-V light emitting sources on silicon substrates [13,14,15,16,17,18], due to their enhanced tolerance to defects [19,20,21,22]
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