Continuous-wave operation of Si-based 1.31 μm InAs/GaAs quantum-dot laser grown by molecular beam epitaxy

Abstract

Excellent performance III-V quantum-dot (QD) lasers grown on Si substrates by molecular beam epitaxy (MBE) are the most promising candidates for commercially viable Si-based lasers. This makes coveted chip-to-chip and system-to-system optical interconnections feasible. This paper reports the realization of high performance 1.31 μm InAs/GaAs QD lasers on a Si substrate with all-MBE The transition from Si to GaAs was realized using Ge as the intermediary layer, and the InAs/GaAs QD laser structure was grown on the GaAs/Ge buffer. Under continuous wave (CW) operation mode, a low threshold current density of 375 A cm−2, high output power of 63 mW, and high operating temperature of 80 °C, have been achieved using Si-based InAs QD lasers with a narrow ridge structure. It has great potential for application in the development of Si-based photonic integration circuits.