Abstract
We report spin-dependent transport properties and I–V hysteresis characteristics in an text{AlO}_{x}-based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four distinctive resistive states in a single device. The temperature dependence of resistance at LRS suggests that the resistive switching is not triggered by the metal filaments within the text{AlO}_{x} layer. The role played by oxygen vacancies in text{AlO}_{x} is the key to determine the resistive state. Our study reveals the possibility of controlling the multiple resistive states in a single text{AlO}_{x}-based MTJ by the interplay of both electric and magnetic fields, thus providing potential applications for future multi-bit memory devices.
Highlights
We report spin-dependent transport properties and I–V hysteresis characteristics in an AlOx-based magnetic tunnel junction (MTJ)
The current–voltage (I–V) characteristics were measured at various voltages and the magnetoresistance was measured in the Current-Perpendicular-to-the-Plane (CPP) configuration using the four-point-probe method with the bias voltage applied on the top electrode while the bottom electrode was grounded, whereas the temperature dependence of the resistance was measured in a Quantum Design Physical Property Measurement System (PPMS)
The room temperature MR effect can be observed at both high resistance state (HRS) and low resistance state (LRS)
Summary
We report spin-dependent transport properties and I–V hysteresis characteristics in an AlOx-based magnetic tunnel junction (MTJ). After the electroforming process at ∼ 1 volt (see the upper-left inset of Fig.1), the device switches from the pristine state to the low resistance state (LRS).
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