Abstract
We present an electrically modulated nonlinear metamaterial at terahertz frequencies. The device consists of a planar array of split-ring resonators (SRRs) fabricated on n-type GaAs. Increasing the incident THz field strength induces carriers in the GaAs substrate, shorting the SRR capacitive gap and modulating the MM resonance. The application of a 15V bias to the MM reduces the net field modulation by ∼60%.
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