Abstract
The authors report the transport properties of ferromagnetic Ga0.97Cr0.03N films with a Curie temperature of over 900K. Samples synthesized under conditions that produce the maximum occupancy of Cr atoms on the Ga site (∼90%) and the maximum ferromagnetic moment of ∼0.6μB∕Cr (775°C growth temperature) exhibit a T−1∕4 dependence of resistivity, indicative of Mott [J. Non-Cryst. Solids 1, 1 (1968)] phonon-assisted variable range hopping between deep level defects. The observation of variable range hopping in ferromagnetic films indicates that ferromagnetism results from a double-exchange-type mechanism. Films grown at higher temperatures (>800°C) show enhanced Cr segregation, properties associated with percolative transport, and very small, if any, ferromagnetic moments.
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