Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I– V– T and C– V– T measurements

Abstract

The current–voltage ( I– V) and capacitance–voltage ( C– V) characteristics of metal–semiconductor (Sn/p-Si) Schottky contacts were measured in the temperature range 150–400 K. The effect of the temperature on the series resistances R S, ideality factors n, the barrier height Φ b and interface state density N SS obtained from the I– V and C– V characteristics were investigated. The n, Φ b, R S, and N SS values were seen to be strongly temperature dependent. The ideality factors, series resistances and interface state densities decreased with increasing temperature for all diodes and the values of n, R S, and N SS obtained from I– V and C– V measurements were found in the ranges of 2.024–1.108, 2.083–1.121; 79.508–33.397 Ω; and 2.14×10 13–0.216×10 13 cm 2 eV −1, 2.277×10 13–0.254×10 13 cm 2 eV −1, respectively. The temperature dependence of energy distribution of interface state density ( N SS) profiles has been determined from I– V measurements by taking into account the bias dependence of the effective barrier height and ideality factor.