Abstract
SnSe is considered as a promising thermoelectric (TE) material since the discovery of the record figure of merit (ZT) of 2.6 at 926 K in single crystal SnSe. It is, however, difficult to use single crystal SnSe for practical applications due to the poor mechanical properties and the difficulty and cost of fabricating a single crystal. It is highly desirable to improve the properties of polycrystalline SnSe whose TE properties are still not near to that of single crystal SnSe. In this study, in order to control the TE properties of polycrystalline SnSe, polycrystalline SnSe–SnTe solid solutions were fabricated, and the effect of the solid solution on the electrical transport and TE properties was investigated. The SnSe1−xTex samples were fabricated using mechanical alloying and spark plasma sintering. X-ray diffraction (XRD) analyses revealed that the solubility limit of Te in SnSe1−xTex is somewhere between x = 0.3 and 0.5. With increasing Te content, the electrical conductivity was increased due to the increase of carrier concentration, while the lattice thermal conductivity was suppressed by the increased amount of phonon scattering. The change of carrier concentration and electrical conductivity is explained using the measured band gap energy and the calculated band structure. The change of thermal conductivity is explained using the change of lattice thermal conductivity from the increased amount of phonon scattering at the point defect sites. A ZT of ~0.78 was obtained at 823 K from SnSe0.7Te0.3, which is an ~11% improvement compared to that of SnSe.
Highlights
IntroductionThe performance of a TE material is evaluated by the dimensionless figure of merit (ZT), ZT = (S2 σ/k)T, where S, σ, k and T are the Seebeck coefficient, electrical conductivity, thermal conductivity, and absolute temperature, respectively [3]
Thermoelectric (TE) materials, which can reversibly convert thermal energy into electrical energy, have been considered as a way to solve the energy crisis and environmental problems [1,2].The performance of a TE material is evaluated by the dimensionless figure of merit (ZT), ZT = (S2 σ/k)T, where S, σ, k and T are the Seebeck coefficient, electrical conductivity, thermal conductivity, and absolute temperature, respectively [3]
SnSe–SnTe solid solutions were prepared by mechanical alloying and spark plasma investigated
Summary
The performance of a TE material is evaluated by the dimensionless figure of merit (ZT), ZT = (S2 σ/k)T, where S, σ, k and T are the Seebeck coefficient, electrical conductivity, thermal conductivity, and absolute temperature, respectively [3]. (= S2 σ) and low thermal conductivity. To increase both σ and S simultaneously is difficult because they tend to change in the opposite direction as the charge carrier concentration changes. It is very difficult to increase σ and to decrease k at the same time as the electronic component of k tends. The effort to find TE materials which have a performance high enough to be used in devices, which consist of earth-abundant and non-toxic elements, is continuing today
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