Abstract
The μ-Al4Mn complex intermetallic phase with 563 atoms in its giant unit cell exhibits a complicated temperature dependence of electrical resistivity that has a broad maximum at about 175 K and a minimum at 13 K. The temperature dependence of the resistivity was reproduced by employing the theory of quantum transport of slow charge carriers, which predicts a crossover from the metallic (Boltzmann-type) positive-temperature-coefficient electrical resistivity at low temperatures to the insulator-like (non-Boltzmann) negative-temperature-coefficient resistivity at elevated temperatures. The low-temperature resistivity minimum was reproduced by considering it as a magnetic effect due to increased scattering of the conduction electrons by the Mn spins on approaching the spin glass phase that develops below the spin freezing temperature Tf = 2.7 K.
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