Abstract
The electrical resistivity and temperature coefficient of resistivity (TCR) of Cu and Nb thin films have been measured over a range of layer thicknesses between 5.6 nm and 1106 nm. The structure of the films has been characterized using transmission electron microscopy (TEM) and x-ray diffraction. The experimental results have been compared with the semi-classical theory of thin-film resistivity due to Dimmich. The grain boundary reflectivity, R, has been found to vary with grain size in the Nb films. Dimmich's theoretical expression for the TCR does not match experiment, but by adapting the theoretical treatment a satisfactory fit has been obtained. The semi-classical expression predicts a negative TCR for certain thin-film and multilayer systems without the need to appeal to localization or correlation.
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