Abstract
Films were deposited on glass substrates by sputtering gallium-doped zinc oxide (GZO) (Ga2O3: 90 wt%, ZnO: 10 wt%) and aluminum-doped zinc oxide (AZO) (Al2O3: 3 wt%, ZnO: 97 wt%) targets simultaneously using a direct-current (DC)/radio-frequency (RF) magnetron cosputtering system. The concentration of gallium (Ga) in the film was varied by using different RF powers for sputtering the GZO target with the DC power for sputtering the AZO target fixed. A minimum resistivitywas obtained at an RF sputtering power of 200 W for the GZO target when the DC sputtering power for the AZO target was fixed at 60 W. It was found that the resistivity of AZO thin films (6.40 × 10−3 Ω-cm for 0 W) could be lowered by more than one order by cosputtering AZO and GZO targets to make AGZO thin films (2.14 × 10−3Ω-cm for 200 W) without lowering their transmittance at all. In addition, the origin of the enhancement in the electrical property of the AZO by additional Ga doping is discussed.
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