Abstract
The structure, electrical resistivity, and magnetoresistance of La0.67Ba0.33MnO3(20 nm) films grown coherently on an La0.3Sr0.7Al0.65Ta0.35O3(001) substrate with a lattice misfit of about 1% were studied. The rigid connection of the manganite layer with the bulk substrate brought about the unit cell distortion of the substrate (a⊥/a‖ = 1.02) and a decrease in the unit cell volume as compared to that of the corresponding bulk crystals (a‖ and a⊥ are the unit cell parameters measured in the substrate plane and along the surface normal, respectively). The temperature TM ≈ 295 K, at which the electrical resistivity ρ of the (20 nm)La0.67Ba0.33MnO3 films reached a maximum, was 40–45 K lower than that for the corresponding bulk crystals. The negative magnetoresistance (MR ≈ −0.25 for μ0H = 1 T) attained a peak value at TMR ≈ 270 K. The response of ρ to a magnetic field depended substantially on the angle between the current flow in the film and the direction of the magnetic field.
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