Electrical properties of V-doped Bi3.15Nd0.85Ti3O12 thin films with different contents

Abstract

Thin films of Nd3+-∕V5+-cosubstituted bismuth titanate, (Bi3.15Nd0.85)(Ti3−xVx)O12 (BNTV), were fabricated by chemical solution deposition technique. For different vanadium contents (x=0.03, 0.06, and 0.09), the crystallized phase and electrical properties of the films were investigated using x-ray diffraction, polarization hysteresis loops, leakage current-voltage, and capacitance butterfly loops. The authors found that increasing vanadium content leads to the decrease of coercive field and the increase of capacitance. The film of vanadium content x=0.09 exhibits fatigue-free and excellent leakage current characteristics with I=5.99×10−9A at applied voltage of 3V, which is much lower than that of Bi3.15Nd0.85Ti3O12 thin film [X. S. Gao and J. Wang, Thin Solid Films 515, 1683 (2006)]. The frequency dependence of the remanent polarization for the BNTV thin film was discussed.