Abstract
AbstractPb(Zr0.5Ti0.5)O3 (PZT) and Co‐doped Pb(Zr0.5Ti0.5)O3 (PCZT) thin films have been fabricated on ITO/glass substrates by a sol–gel method combined with a rapid thermal annealing process. The films were polycrystalline with (101)‐preferred orientation. The experiments found that the addition of cobalt in PZT films greatly improved the ferroelectric properties of PZT thin films. Large remanent polarization and small coercive field were confirmed by P–E hysteresis loop measurements. The values for PZT films and PCZT films with 10 mol% Co‐doped annealed at 600 °C were 36.5 µC/cm2 and 45.2 kV/cm, 58.6 µC/cm2 and 67.3 kV/cm, respectively. Also, dielectric properties and I–V properties of PCZT films were revealed to be sensitive to the content of cobalt. The loss factor was higher for PCZT than for PZT films. The same behavior was obtained for the leakage current density. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
