Abstract
The electrical properties of diamond and of the metal-contact to diamond interface depend strongly on preparation conditions. A microwave plasma assisted chemical vapor deposition technique was used to deposit undoped diamond films with a variety of grain sizes. Schottky barrier contacts were achievable with rectification ratios as high as 2 × 10 5. The current-voltage characteristics of such samples were modeled as a Schottky barrier diode in series with bulk diamond, for which the property of the bulk diamond follows an I ∝ V m relationship indicative of space-charge-limited current. Generally the low-voltage rectification ratio, which is indicative of diode quality, increased with increasing grain size for a given set of deposition conditions.
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