Abstract
Stress-induced leakage currents (SILCs) in thin Ta 2O 5 films after short- and long-term constant current stress (CCS) at both gate polarities at different levels of injected current were investigated. The behavior of the SILCs and the change of quasistatic C– V characteristics after the degradation confirmed the variations of gate voltage with time during CCS necessary to maintain the injected current density through the oxide. The conduction mechanisms were also investigated. Initially, normal Poole–Frenkel (PF) mechanism dominates in the oxide at medium fields (0.4– 1.7 MV/cm) independently of the deposition temperature or annealing steps. After the degradation modified PF with different compensation factors appears. After long-term degradation conduction mechanism goes back to PF.
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