Abstract
Microwave plasma oxidation of polycrystalline silicon has been carried out to grow thin polyoxide films at a low temperature in ambient. The electrical properties of grown oxides have been studied using a metal-oxide-semiconductor structure. The current-voltage characteristics of polyoxides have been studied for different poly doping and post-oxidation annealing conditions. It is found that the polyoxide on undoped poly-Si has lower leakage current and higher breakdown voltage, whereas the oxide on doped poly-Si has higher tunnelling efficiency at lower field. The oxide on boron doped poly-Si exhibits electron trapping behaviour.
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